Memory controller and operating method thereof

ABSTRACT

In a memory controller for controlling an operation of a memory device, the memory controller includes a buffer memory and a buffer management circuit. The buffer memory includes an input buffer for storing input data received from a host and an output buffer for storing output data received from the memory device. The buffer management circuit changes capacities of the input buffer and the output buffer, based on a use state of at least one of the input buffer and the output buffer.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.16/148,385 filed on Oct. 1, 2018, which claims benefits of priority ofKorean Patent Application No. 10-2018-0018291 filed on Feb. 14, 2018.The disclosure of each of the foregoing application is incorporatedherein by reference in its entirety.

BACKGROUND 1. Field of Invention

Various embodiments of the present disclosure generally relate to anelectronic device. Particularly, the embodiments relate to a memorycontroller and an operating method thereof.

2. Description of Related Art

Memory devices may be formed in a two-dimensional structure in whichstrings are arranged horizontally, or be formed in a three-dimensionalstructure in which strings are arranged vertically. A three-dimensionalsemiconductor device is a memory device used in order to overcome thelimit of degree of integration in two-dimensional semiconductor devices,and may include a plurality of memory cells vertically stacked on asemiconductor substrate.

SUMMARY

Embodiments provide a memory controller capable of more efficientlyutilizing a buffer memory.

Embodiments also provide an operating method of a memory controllercapable of more efficiently utilizing a buffer memory.

According to an aspect of the present disclosure, there is provided amemory controller for controlling an operation of a memory device, thememory controller including: a buffer memory configured to include aninput buffer for storing input data received from a host and an outputbuffer for storing output data received from the memory device; and abuffer management circuit configured to change capacities of the inputbuffer and the output buffer, based on a use state of at least one ofthe input buffer and the output buffer.

The buffer memory may be configured as an SRAM.

The input buffer and the output buffer may be divided by a bufferpointer indicating a specific address of the buffer memory. The buffermanagement circuit may change the capacities of the input buffer and theoutput buffer by changing the address indicated by the buffer pointer.

As the position indicated by the buffer pointer is changed, when thecapacity of any one of the input buffer and the output buffer isincreased, the capacity of the other of the input buffer and the outputbuffer may be decreased.

The buffer management circuit may include: a buffer monitoring sectionconfigured to output buffer analysis data according to usage of thebuffer memory; a threshold value storing section configured to store athreshold value for changing the capacities of the input buffer and theoutput buffer; and a buffer capacity determining section configured todetermine whether the capacities of the input buffer and the outputbuffer are to be changed by comparing the buffer analysis data and thethreshold value.

The buffer analysis data may include a capacity of the input buffer,which is being currently used, and the threshold value may include afirst threshold capacity of the input buffer. When the capacity of theinput buffer, which is being currently used, is larger than or equal tothe first threshold capacity, the buffer capacity determining sectionmay determine that the capacity of the input buffer is to be increased.

The buffer analysis data may include a capacity of the output buffer,which is being currently used, and the threshold value may include asecond threshold capacity of the output buffer. When the capacity of theoutput buffer, which is being currently used, is larger than or equal tothe second threshold capacity, the buffer capacity determining sectionmay determine that the capacity of the output buffer is to be increased.

The buffer analysis data may include a first count value that is anumber where the capacity of the input buffer, which is being used,exceeds a predetermined first threshold capacity, and the thresholdvalue may include a predetermined first threshold number of the inputbuffer. When the first count value measured during a predetermined firstperiod is greater than or equal to the first threshold number, thebuffer capacity determining section may determine that the capacity ofthe input buffer is to be increased.

The buffer analysis data may include a second count value that is anumber where the capacity of the output buffer, which is being used,exceeds a predetermined second threshold capacity, and the thresholdvalue may include a predetermined second threshold number of the outputbuffer. When the second count value measured during a predeterminedfirst period is greater than or equal to the second threshold number,the buffer capacity determining section may determine that the capacityof the output buffer is to be increased.

The buffer analysis data may include a first count value that is anumber where the capacity of the input buffer, which is being used,exceeds a predetermined first threshold capacity, and the thresholdvalue may include a predetermined third threshold number of the inputbuffer. When the first count value measured during a predetermined firstperiod is smaller than the third threshold number, the buffer capacitydetermining section may determine that the capacity of the input bufferis to be decreased.

The buffer analysis data may include a second count value that is anumber where the capacity of the output buffer, which is being used,exceeds a predetermined second threshold capacity, and the thresholdvalue may include a predetermined fourth threshold number of the outputbuffer. When the second count value measured during a predeterminedfirst period is smaller than the fourth threshold number, the buffercapacity determining section may determine that the capacity of theoutput buffer is to be decreased.

The buffer analysis data may include a total capacity of data that havebeen stored in the input buffer, and the threshold value may include apredetermined threshold accumulated capacity of the input buffer. Whenthe total capacity is larger than or equal to the threshold accumulatedcapacity, the buffer capacity determining section may determine that thecapacity of the input buffer is to be increased.

The buffer monitoring section may update the total capacity wheneverinput data is stored in the input buffer.

The buffer analysis data may include a total capacity of data that havebeen stored in the output buffer, and the threshold value may include apredetermined threshold accumulated capacity of the output buffer. Whenthe total capacity is larger than or equal to the threshold accumulatedcapacity, the buffer capacity determining section may determine that thecapacity of the output buffer is to be increased.

Each of the input buffer and the output buffer may be implemented in theFirst-In-First-Out (FIFO) structure.

According to an aspect of the present disclosure, there is provided amethod for operating a memory controller for controlling an operation ofa memory device, the method including: checking use states of an inputbuffer and an output buffer of a buffer memory in the memory controller;and adjusting capacities of the input buffer and the output buffer,based on the use states.

The checking of the use states may include: checking a capacity of theinput buffer, which is being currently used; and determining whether thecapacity of the input buffer, which is being used, is larger than orequal to a predetermined first threshold capacity. In the adjusting ofthe capacities of the input buffer and the output buffer, the capacityof the input buffer may be increased when the capacity of the inputbuffer, which is being used, is larger than or equal to the firstthreshold capacity.

The increasing of the capacity of the input buffer may be performed bychanging an address indicated by a buffer pointer for distinguishing theinput buffer and the output buffer from each other.

The checking of the use states may include: checking a capacity of theoutput buffer, which is being currently used; and determining whetherthe capacity of the output buffer, which is being used, is larger thanor equal to a predetermined second threshold capacity. In the adjustingof the capacities of the input buffer and the output buffer, thecapacity of the output buffer may be increased when the capacity of theoutput buffer, which is being used, is larger than or equal to thesecond threshold capacity.

The checking of the use states may include: checking a first count valuethat is a number where the capacity of the input buffer, which is beingused, exceeds a predetermined first threshold capacity; and determiningwhether the first count value is greater than or equal to apredetermined threshold number. In the adjusting of the capacities ofthe input buffer and the output buffer, the capacity of the input buffermay be increased when the first count value is greater than or equal tothe first threshold number.

The checking of the use states may include: checking a second countvalue that is a number where the capacity of the output buffer, which isbeing used, exceeds a predetermined second threshold capacity; anddetermining whether the second count value is greater than or equal to apredetermined second threshold number. In the adjusting of thecapacities of the input buffer and the output buffer, the capacity ofthe output buffer may be increased when the second count value isgreater than or equal to the second threshold number.

The checking of the use states may include: checking a total inputcapacity that is the total capacity of data that have been stored in theinput buffer; and determining whether the total input capacity is largerthan or equal to a predetermined threshold accumulated capacity. In theadjusting of the capacities of the input buffer and the output buffer,the capacity of the input buffer may be increased when the total inputcapacity is larger than or equal to the threshold accumulated capacity.

The checking of the use states may include: checking a total outputcapacity that is the total capacity of data that have been stored in theoutput buffer; and determining whether the total output capacity islarger than or equal to a predetermined threshold accumulated capacity.In the adjusting of the capacities of the input buffer and the outputbuffer, the capacity of the output buffer may be increased when thetotal output capacity is larger than or equal to the thresholdaccumulated capacity.

According to an aspect of the present disclosure, there is provided acontroller including: an input buffer for buffering inbound data; anoutput buffer for buffering outbound data; and a buffer managementcircuit configured to dynamically adjust sizes of the input and outputbuffers by allocating available size of one to the other one between theinput and output buffers according to occupied sizes of one or more ofthe input and output buffers.

BRIEF DESCRIPTION OF THE DRAWINGS

Various embodiments will now be described in more detail hereinafterwith reference to the accompanying drawings; however, elements andfeatures of the present disclosure may be arranged or configureddifferently than shown or described herein. Thus, the present inventionis not limited to the embodiments set forth herein. Rather, theseembodiments are provided so that this disclosure is thorough andcomplete and fully conveys the scope of the embodiments to those skilledin the art. Throughout the specification, reference to “an embodiment”or the like is not necessarily to only one embodiment, and differentreferences to “an embodiment” or the like are not necessarily to thesame embodiment(s).

In the drawings, dimensions of the figures may be exaggerated forclarity of illustration. It will be understood that when an element isreferred to as being “between” two elements, it can be the only elementbetween the two elements, or one or more intervening elements may alsobe present. Like reference numerals refer to like elements throughout.

FIG. 1 is a diagram illustrating a memory system including a memorycontroller according to an embodiment of the present disclosure.

FIG. 2 is a diagram illustrating a memory device of FIG. 1.

FIG. 3 is a block diagram illustrating a memory controller according toan embodiment of the present disclosure.

FIG. 4 is a block diagram illustrating an exemplary embodiment of abuffer management circuit shown in FIG. 3.

FIG. 5 is a block diagram schematically illustrating a buffer memory ofFIG. 3.

FIG. 6 is a flowchart illustrating an operating method of the memorycontroller according to an embodiment of the present disclosure.

FIG. 7 is a diagram illustrating a threshold capacity of an inputbuffer.

FIG. 8A is a flowchart illustrating an example of the operating methodof the memory controller according to the present disclosure.

FIG. 8B is a flowchart illustrating another example of the operatingmethod of the memory controller according to the present disclosure.

FIG. 9 is a block diagram illustrating threshold capacities of the inputbuffer and an output buffer.

FIG. 10 is a flowchart illustrating an operating method of the memorycontroller according to another embodiment of the present disclosure.

FIG. 11A is a flowchart illustrating an example of the operating methodof the memory controller according to the present disclosure.

FIG. 11B is a flowchart illustrating another example of the operatingmethod of the memory controller according to the present disclosure.

FIG. 12 is a flowchart illustrating an operating method of the memorycontroller according to still another embodiment of the presentdisclosure.

FIG. 13A is a flowchart illustrating an example of the operating methodof the memory controller according to the present disclosure.

FIG. 13B is a flowchart illustrating another example of the operatingmethod of the memory controller according to the present disclosure.

FIG. 14 is a diagram briefly illustrating data input/output to/from thebuffer memory.

FIG. 15A is a flowchart illustrating an operating method of the memorycontroller according to still another embodiment of the presentdisclosure.

FIG. 15B is a flowchart illustrating an operating method of the memorycontroller according to still another embodiment of the presentdisclosure.

FIGS. 16 to 19 are diagrams illustrating various embodiments of thememory system including the memory controller shown in FIG. 3.

DETAILED DESCRIPTION

In the following detailed description, embodiments of the presentdisclosure are shown and described simply by way example. As thoseskilled in the art would realize, the described embodiments may bemodified in various different ways, all without departing from thespirit or scope of the present disclosure. Accordingly, the drawings anddescription are to be regarded as illustrative in nature and notrestrictive.

In the entire specification, when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the another element or be indirectly connectedor coupled to the another element with one or more intervening elementsinterposed. In addition, when an element is referred to as “including” acomponent, this indicates that the element may further include one ormore other components rather than excluding such other component(s)unless the context indicates otherwise.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the presentinvention.

As used herein, singular forms may include the plural forms as well andvice versa, unless the context clearly indicates otherwise.

Hereinafter, exemplary embodiments of the present disclosure will bedescribed in detail with reference to the accompanying drawings. Thesame reference numerals are used to designate the same elements as thoseshown in other drawings. In the following descriptions, only portionsnecessary for understanding operations according to the exemplaryembodiments may be described, and descriptions of the other portions maybe omitted so as to not obscure important concepts of the embodiments.

FIG. 1 is a diagram illustrating a memory system including a memorycontroller according to an embodiment of the present disclosure.

Referring to FIG. 1, the memory system 1000 may include a memory device1100 for storing data and a memory controller 1200 for controlling thememory device 1100 under the control of a host 2000.

The host 2000 may communicate with the memory system 1000 by using atleast one of various interface protocols such as Peripheral ComponentInterconnect-Express (PCI-E), Advanced Technology Attachment (ATA),Serial ATA (SATA), Parallel ATA (PATA), or Serial Attached SCSI (SAS).Interface protocols between the host 2000 and the memory system 1000 arenot limited to the above-described examples, and may be one of otherinterface protocols such as a Universal Serial Bus (USB), a Multi-MediaCard (MMC), an Enhanced Small Disk Interface (ESDI), and IntegratedDrive Electronics (IDE).

The memory controller 1200 may control the overall operations of thememory system 1000, and control data exchange between the host 2000 andthe memory device 1100. For example, the memory controller 1200 mayprogram or read data by controlling the memory device 1100 in responseto a request from the host 2000. Also, the memory controller 1200 maystore information of main memory blocks and sub-memory blocks, which areincluded in the memory device 1100, and select the memory device 1100 toperform a program operation on a main memory block or a sub-memory blockaccording to the amount of data loaded for the program operation.Depending on an embodiment, the memory device 1100 may include, forexample, a Double Data Rate Synchronous Dynamic Random Access Memory(DDR SDRAM), a Low Power Double Data Rate 4 (LPDDR4) SDRAM, a GraphicsDouble Data Rate (GDDR) SRAM, a Low Power DDR (LPDDR), a Rambus DynamicRandom Access Memory (RDRAM), and a flash memory.

The memory device 1100 may perform a program, read or erase operationunder the control of the memory controller 1200. A detailedconfiguration and operation of the memory device 1100 will beexemplarily described with reference to FIG. 2.

The memory controller 1200 according to the embodiment of the presentdisclosure may perform a test by sequentially popping and pushingcommands stored in a command queue. Also, the memory controller 1200 maytranslate at least one of the commands stored in the command queue,based on the test result. Thus, the command queue of the memorycontroller 1200 may be more efficient. The memory controller 1200according to the embodiment of the present disclosure will be describedin more detail with reference to FIG. 3.

FIG. 2 is a diagram illustrating the memory device of FIG. 1.

Referring to FIG. 2, the memory device 1100 may include a memory cellarray 100 that stores data. The memory device 1100 may includeperipheral circuit 200 configured to perform a program operation forstoring data in the memory cell array 100, a read operation foroutputting the stored data, and an erase operation for erasing thestored data. The memory device 1100 may include a control logic 300 thatcontrols the peripheral circuit 200 under the control of the memorycontroller (1200 of FIG. 1).

The memory cell array 100 may include a plurality of memory blocks MB1to MBk (k is a positive integer) 110. Local lines LL and bit lines BL1to BLn (n is a positive integer) may be coupled to the memory blocks MB1to MBk 110. For example, the local lines LL may include a first selectline (not shown), a second select line (not shown), and a plurality ofword lines (not shown) arranged between the first and second selectlines. Also, the local lines LL may further include dummy lines (notshown) arranged between the first select line and the word lines andbetween the second select line and the word lines. The first select linemay be a source select line (not shown), and the second select line maybe a drain select line (not shown). For example, the local lines LL mayinclude word lines, drain and source select lines, and source lines SL.For example, the local lines LL may further include dummy lines. Forexample, the local lines LL may further include pipe lines (not shown).The local lines LL may be coupled to the memory blocks MB1 to MBk 110,respectively, and the bit lines BL1 to BLn may be commonly coupled tothe memory blocks MB1 to MBk 110. The memory blocks MB1 to MBk 110 maybe implemented in a two-dimensional or three-dimensional structure. Forexample, memory cells may be arranged in a direction parallel to asubstrate in memory blocks 110 having a two-dimensional structure. Forexample, memory cells may be arranged in a direction vertical to asubstrate in memory blocks 110 having a three-dimensional structure.

The peripheral circuit 200 may be configured to perform program, read,and erase operations of a selected memory block 110 under the control ofthe control logic 300. For example, the peripheral circuit 200, underthe control of the control logic 300, may supply verify and passvoltages to the first select line, the second select line, and the wordlines, selectively discharge the first select line, the second selectline, and the word lines, and verify memory cells coupled a selectedword line among the word lines. For example, the peripheral circuit 200may include a voltage generating circuit 210, a row decoder 220, a pagebuffer group 230, a column decoder 240, an input/output circuit 250, anda sensing circuit 260.

The voltage generating circuit 210 may generate various operatingvoltages Vop used for program, read, and erase operations in response toan operation signal OP_CMD. Also, the voltage generating circuit 210 mayselectively discharge the local lines LL in response to the operationsignal OP_CMD. For example, the voltage generating circuit 210 maygenerate a program voltage, a verify voltage, pass voltages, a turn-onvoltage, a read voltage, an erase voltage, a source line voltage, andthe like under the control of the control logic 300.

The row decoder 220 may transfer the operating voltages Vop to locallines LL coupled to a selected memory block 110 in response to a rowaddress RADD.

The page buffer group 230 may include a plurality of page buffers PB1 toPBn 231 coupled to the bit lines BL1 to BLn. The page buffers PB1 to PBn231 may operate in response to page buffer control signals PBSIGNALS.For example, the page buffers PB1 to PBn 231 may temporarily store datareceived through the bit lines BL1 to BLn, or sense voltages or currentof the bit lines BL1 to BLn in a read or verify operation.

The column decoder 240 may transfer data between the input/outputcircuit 250 and the page buffer group 230 in response to a columnaddress CADD. For example, the column decoder 240 may exchange data withthe page buffers 231 through data lines DL, or exchange data with theinput/output circuit 250 through column lines CL.

The input/output circuit 250 may transfer a command CMD and an addressADD, which are received from the memory controller (1200 of FIG. 1), tothe control logic 300, or communicate data DATA with the column decoder240.

In a read operation or verify operation, the sensing circuit 260 maygenerate a reference current in response to a permission bit VRY_BIT<#>,and output a pass signal PASS or a fail signal FAIL by comparing asensing voltage VPB received from the page buffer group 230 with areference voltage generated by the reference current.

The control logic 300 may control the peripheral circuit 200 byoutputting the operation signal OP_CMD, the row address RADD, the pagebuffer control signals PBSIGNALS, and the permission bit VRY_BIT<#> inresponse to the command CMD and the address ADD. Also, the control logic300 may determine whether the verify operation has passed or failed inresponse to the pass or fail signal PASS or FAIL.

FIG. 3 is a block diagram illustrating the memory controller 1200according to an embodiment of the present disclosure.

Referring to FIG. 3, the memory controller 1200 according to theembodiment of the present disclosure includes a main memory 400, abuffer memory 410, a buffer management circuit 420, a control circuit430, a data conversion circuit 440, and a memory interface 450. Thememory controller 1200 according to the embodiment of the presentdisclosure may further include other components in addition to thecomponents shown in FIG. 3.

The main memory 400 may receive input data from the host 2000 andtemporarily store the input data. Also, the main memory 400 may receiveoutput data from the memory device 1100 and temporarily store the outputdata. Meanwhile, the main memory 400 may store the overall datanecessary for an operation of the memory controller 1200. In anembodiment, the main memory 400 may be configured as a Dynamic RandomAccess Memory (DRAM).

In a general memory system, a host-side clock cycle may be differentfrom a memory-device-side clock cycle. That is, as the host-side clockcycle is different from the memory-device-side clock cycle, a buffermemory for compensating for a speed difference caused by the differencein the clock cycles may be required. In FIG. 3, the main memory 400 mayoperate with the host-side clock cycle. Meanwhile, the data conversioncircuit 440, the memory interface 450, and the like may operate with thememory-device-side clock cycle. Thus, the buffer memory 410 of thememory controller 1200 may compensate for a difference in speed betweenthe main memory 400 operating at a relatively high speed with thehost-side clock cycle and the data conversion circuit 440 operating at arelatively low speed with the memory-device-side clock cycle.

The main memory 400 may communicate with the buffer memory 410 through abus BUS. Although not shown in detail in FIG. 3, the main memory 400 mayalso communicate with other components through the bus BUS. The mainmemory 400 may store input data received from the host 2000. Also, themain memory 400 may store output data received from the memory device1100.

The buffer memory 410 may be coupled between the main memory 400 and thedata conversion circuit 440. The buffer memory 410 may receive inputdata from the main memory 400. The input data is data transferred fromthe host 2000, and may be data to be written to the memory device 1100.The received input data may be temporarily stored in the buffer memory410 and then transferred to the data conversion circuit 440.Subsequently, the input data may be transferred to the memory device1100 through the memory interface 450.

Meanwhile, the buffer memory 410 may receive output data from the dataconversion circuit 440. The output data may be data output from thememory device 1100 in response to a read command, etc. from the memorycontroller 1200. The output data is transferred from the memory device1100 to the data conversion circuit 440 through the memory interface450. The data conversion circuit 440 converts the received output dataand transfers the converted output data to the buffer memory 410. Thebuffer memory 410 temporarily stores the output data and then transfersthe output data to the main memory 400. The data transferred to the mainmemory 400 is output to the host.

The buffer memory 410 may include an input buffer 411 and an outputbuffer 413 to store the input data and the output data, respectively.The input buffer 411 temporarily stores input data transferred from themain memory 400. The output buffer 413 temporarily stores output datatransferred from the data conversion circuit 440. Each of the inputbuffer 411 and the output buffer 413 may be implemented in theFirst-In-First-Out (FIFO) structure. Meanwhile, in an embodiment, thebuffer memory 410, including the input buffer 411 and the output buffer413, may be implemented with a Static RAM (SRAM).

Although FIG. 3 illustrates, by way of example, the input buffer 411 andthe output buffer 413 separate from each other, the input buffer 411 andthe output buffer 413 may be integrated. For example, the buffer memory410 may be implemented with a single SRAM, and the input buffer 411 andthe output buffer 413 may be implemented as memory areas logicallydivided in the single SRAM.

The buffer management circuit 420 may control an operation of the buffermemory 410. More specifically, the buffer management circuit 420 maydynamically adjust each capacity of the input buffer 411 and the outputbuffer 413 in the buffer memory 410. In an embodiment, the buffermanagement circuit 420 may adjust the capacities of the input buffer 411and the output buffer 413 according to the usage of the input buffer 411or the output buffer 413.

The control circuit 430 may control the overall operations of the memorycontroller 1200. In some embodiments, the control circuit 430 maycontrol an operation of at least one of the main memory 400, the buffermemory 410, the buffer management circuit 420, the data conversioncircuit 440, and the memory interface 450. In an embodiment, thecontroller 430 may be configured as a microcontroller.

The data conversion circuit 440 may receive input data from the buffermemory 410 and convert the input data. In an example, the dataconversion circuit 440 may insert parity bits for ECC into the inputdata. In another example, the data conversion circuit 440 may randomizethe input data. In addition, the data conversion circuit 440 may performvarious functions of converting the input data into data to be actuallywritten to the memory device by encoding the input data.

Meanwhile, the data conversion circuit 440 may inversely convert outputdata received from the memory device 1100. In an example, the dataconversion circuit 440 may perform ECC on the output data. In anotherexample, the data conversion circuit 440 may randomize the output data.In addition, the data conversion circuit 440 may perform variousfunctions of converting the output data into data to be actually outputto the host by decoding the output data.

The memory interface 450 may control data transfer between the memorycontroller 1200 and the memory device 1100.

The capacities of the input buffer 411 and the output buffer 413 mayvary depending on usage of the memory system 1000. For example, when thememory system 1000 is applied to a camera or the like, a write operationof data is relatively frequently performed. When the capacity of theinput buffer 411 is small, a bottleneck phenomenon may occur when datais transferred from the main memory 400 to the data conversion circuit440. This results in a decrease in the total write speed of the memorysystem 1000. Thus, in this example, the input buffer 411 requires arelatively large capacity, and the output buffer 413 does not require alarge capacity.

On the other hand, when the memory system 1000 is applied to a musicplayer, for example, a read operation of data is relatively frequentlyperformed. When the capacity of the output buffer 413 is small, abottleneck phenomenon may occur when data is transferred from the dataconversion circuit 440 to the main memory 400. This results in adecrease in the total read speed of the memory system 1000. Thus, inthis example, the output buffer 413 requires a relatively largecapacity, and the input buffer 411 does not require a large capacity.

The memory controller 1200 according to the embodiment of the presentdisclosure adjusts the capacities of the input buffer 411 and the outputbuffer 413 according to the usage of at least one of the input buffer411 and the output buffer 413. Accordingly, the capacities of the inputbuffer 411 and the output buffer 413 in the buffer memory 410 aredynamically changed depending on the usage of the memory system 1000.Consequently, the throughput between the main memory 400 and the dataconversion circuit 440 in the memory controller 1200 can be increased,and the total operation speed of the memory system 1000 can beincreased.

FIG. 4 is a block diagram illustrating an exemplary embodiment of thebuffer management circuit 420 shown in FIG. 3.

Referring to FIG. 4, the buffer management circuit 420 may include abuffer monitoring section 421, a threshold value storing section 423,and a buffer capacity determining section 425.

The buffer monitoring section 421 receives buffer check data BMDindicating a use state of the buffer memory 410, and outputs bufferanalysis data ANL, based on the buffer check data BMD. The thresholdvalue storing section 423 stores threshold values THs for changingcapacities of the input buffer 411 and the output buffer 413. Thethreshold values THs may be reference values compared with the bufferanalysis data ANL to determine whether to adjust capacities of the inputbuffer 411 and the output buffer 413. The buffer capacity determiningsection 425 determines whether to adjust capacities of the input buffer411 and the output buffer 413, by comparing the threshold values THswith the buffer analysis data ANL, and generates a control signal CTR,based on the determination result. The control signal CTR is transferredto the buffer memory 410. More specifically, the control signal CTR maybe a signal for changing the address indicated by a buffer pointer fordividing the input buffer 411 and the output buffer 413 from each other.When the position indicated by the buffer pointer is changed, thecapacities of the input buffer 411 and the output buffer 413 arechanged. This will be described in more detail later with reference toFIG. 5.

Although FIGS. 3 and 4 illustrate, by way of example, that the buffermanagement section 420 is a component provided separately from thecontrol circuit 430, the memory controller 1200 according to theembodiment of the present disclosure is not limited thereto. That is,the buffer management section 420 and the control circuit 430 may beintegrated. The buffer management section 420 and the control circuit430 may be configured as one microprocessor.

FIG. 5 is a block diagram schematically illustrating a buffer memory 410of FIG. 3.

Referring to FIG. 5, the buffer memory 410 includes the input buffer 411and the output buffer 413. In the particular embodiment shown in FIG. 5,the input buffer 411 and the output buffer 413 are not configuredseparately from each other, but are configured as memory areas logicallydivided in the buffer memory 410. A buffer pointer indicating a specificaddress of the buffer memory 410 may logically divide the buffer memory410 into the input buffer 411 and the output buffer 413. The bufferpointer may be a memory pointer indicating a logical address as aboundary between the input buffer 411 and the output buffer 413.

As the address indicated by the buffer pointer is changed, capacities ofthe input buffer 411 and the output buffer 413 may be changed. When theposition indicated by the buffer pointer shown in FIG. 5 is movedupward, the capacity of the input buffer 411 may decrease, and thecapacity of the output buffer 413 may increase. On the contrary, whenthe position indicated by the buffer pointer is moved downward, thecapacity of the input buffer 411 may increase, and the capacity of theoutput buffer 413 may decrease.

In the memory controller 1200 according to the embodiment of the presentdisclosure, the address indicated by the buffer pointer is changeddepending on use states of the input buffer 411 and the output buffer413. Accordingly, the capacities of the input buffer 411 and the outputbuffer 413 can be changed dynamically. Consequently, the capacities ofthe input buffer 411 and the output buffer 413 are changed adaptivelydepending on characteristics of a user, so that the throughput betweenthe main memory 400 and the data conversion circuit 440 can beincreased. Thus, the operation speed of the memory system 1000 can beincreased.

FIG. 6 is a flowchart illustrating an operating method of the memorycontroller according to an embodiment of the present disclosure.

Referring to FIG. 6, the operating method of the memory controller 1200according to the embodiment of the present disclosure includes a stepS100 of checking use states of the input buffer 411 and the outputbuffer 413, and a step S200 of adjusting capacities of the input buffer411 and the output buffer 413, based on the use states.

Exemplary embodiments of the steps S100 and S200 will be described indetail with reference to FIGS. 8A to 14.

FIG. 7 is a diagram illustrating a threshold capacity of the inputbuffer 411.

Referring to FIG. 7, for convenience of description, only the inputbuffer 411 of the buffer memory 410 is illustrated, and illustration ofthe output buffer 413 is omitted. However, it is to be noted that thebuffer memory 410 also includes the output buffer 413, and the outputbuffer 413 is illustrated similar to the input buffer 411 of FIG. 7.

Referring to FIG. 7, an input buffer capacity being used among the totalcapacity of the input buffer 411 is represented by hatching. Inaddition, a threshold capacity is also represented in FIG. 7. Thethreshold capacity may be used as a reference value compared with theinput buffer capacity being used to change the capacity of the inputbuffer 411.

When the memory system 1000 frequently performs a write operation ofdata depending on characteristics of a user, it is highly likely thatthe input buffer capacity being used by the input buffer 411 willincrease. Therefore, a situation in which the input buffer capacitybeing used is larger than the threshold capacity may frequently occur.When the input buffer capacity being used is equal to the total capacityof the input buffer 411, input data cannot be stored in the input buffer411. The storing of the input data in the input buffer 411 is delayed,and therefore, a data bottleneck phenomenon from the main memory 400 tothe data conversion circuit 440 occurs.

Thus, when the input buffer capacity being used is larger than thethreshold capacity or when the situation in which the input buffercapacity being used exceeds the threshold capacity frequently occurs,the capacity of the input buffer 411 is increased, so that the databottleneck phenomenon can be prevented. Accordingly, the throughput fromthe main memory 400 to the data conversion circuit 440 is increased.

On the contrary, when the memory system 1000 frequently performs a readoperation of data depending on the characteristics of the user, it ishighly likely that an output buffer capacity being used by the outputbuffer 413 will increase. Therefore, a situation in which the outputbuffer capacity being used is larger than the threshold capacity mayfrequently occur. When the output buffer capacity being used is equal tothe total capacity of the output buffer 413, output data cannot bestored in the output buffer 413. The storing of the output data in theoutput buffer 413 is delayed, and therefore, a data bottleneckphenomenon from the data conversion circuit 440 to the main memory 400occurs.

Thus, when the output buffer capacity being used is larger than thethreshold capacity or when the situation in which the output buffercapacity being used exceeds the threshold capacity frequently occurs,the capacity of the output buffer 413 is increased, so that the databottleneck phenomenon can be prevented. Accordingly, the throughput fromthe data conversion circuit 440 to the main memory 400 is increased.

FIG. 8A is a flowchart illustrating an example of the operating methodof the memory controller 1200 according to the present disclosure. FIG.8B is a flowchart illustrating another example of the operating methodof the memory controller 1200 according to the present disclosure. FIG.8A illustrates an embodiment in which the capacity of the input buffer411 is increased according to the usage of the input buffer 411, andFIG. 8B illustrates an embodiment in which the capacity of the outputbuffer 413 is increased according to the usage of the output buffer 413.Hereinafter, an operating method of the memory controller according toan exemplary embodiment of the present disclosure will be described withreferences to FIGS. 4, 8A, and 8B.

Referring to FIG. 8A, an operating method of the memory controller 1200according to an exemplary embodiment of the present disclosure includesa step S110 of checking a capacity of the input buffer 411, which isbeing currently used, and a step S130 of determining whether the inputbuffer capacity being used is larger than or equal to a thresholdcapacity. The steps S110 and S130 may be steps included in the step S100of FIG. 6.

The operating method of the memory controller according to the exemplaryembodiment of the present disclosure further includes a step S210 ofincreasing the capacity of the input buffer 411 when the input buffercapacity being used is larger than or equal to the threshold capacity asa result of the step S130 (that is, “YES” at step S130). The step S210may be a step included in the step S200 of FIG. 6. When the input buffercapacity being used is smaller than the threshold capacity as a resultof the step S130 (that is, “NO” at step S130), the process ends withoutincreasing the capacity of the input buffer.

Specifically, in the step S110, the input buffer capacity beingcurrently used is transferred in the form of buffer check data BMD tothe buffer monitoring section 421. The buffer monitoring section 421transfers, as buffer analysis data ANL, the input buffer capacity beingcurrently used, which is included in the buffer check data BMD, to thebuffer capacity determining section 425.

In the step S130, the buffer capacity determining section 425 comparesthe input buffer capacity being currently used with the thresholdcapacity. The threshold value storing section 423 transfers thethreshold capacity as a threshold value THs to the buffer capacitydetermining section 425. When the input buffer capacity being currentlyused is larger than or equal to the threshold capacity, the buffercapacity determining section 425 generates a control signal CTR forincreasing the capacity of the input buffer 411 and transfers thecontrol signal CTR to the buffer memory 410. The position indicated bythe buffer pointer is changed in response to the control signal CTR, sothat the capacity of the input buffer 411 increases.

When the input buffer capacity being currently used is smaller than thethreshold capacity, the capacity of the input buffer 411 is not changed.Each of the steps S110, S130, and S210 shown in FIG. 8A may beperiodically performed for every certain time interval. That is, thebuffer management circuit 420 may periodically receive buffer check dataBMD, and determine whether the capacity of the input buffer 411 is to bechanged based on the buffer check data BMD.

Referring to FIG. 8B, an operating method of the memory controller 1200according to an exemplary embodiment of the present disclosure includesa step S115 of checking a capacity of the output buffer 413, which isbeing currently used, and a step S135 of determining whether the outputbuffer capacity being used is larger than or equal to a thresholdcapacity. The steps S115 and S135 may be steps included in the step S100of FIG. 6.

The operating method of the memory controller 1200 according to theexemplary embodiment of the present disclosure further includes a stepS215 of increasing the capacity of the output buffer 413 when the outputbuffer capacity being used is larger than or equal to the thresholdcapacity as a result of the step S135 (that is, “YES” at step S135). Thestep S215 may be a step included in the step S200 of FIG. 6. When theoutput buffer capacity being used is smaller than the threshold capacityas a result of the step S135 (that is, “NO” at step S135), the processends without increasing the capacity of the output buffer.

It will be understood that, as the steps S115, S135, and S215 areperformed, the capacity of the output buffer 413 is changed similar tohow the capacity of the input buffer 411 changed as described in FIG.8A. Therefore, overlapping descriptions will be omitted.

FIG. 9 is a block diagram illustrating threshold capacities of the inputbuffer 411 and the output buffer 413.

Referring to FIG. 9, the input buffer 411 and the output buffer 413 inthe buffer memory 410 are schematically illustrated. The input buffer411 and the output buffer 413 are divided by a buffer pointer, andcapacities of the input buffer 411 and the output buffer 413 may bechanged when the position indicated by the buffer pointer is changed.Meanwhile, a first threshold capacity is determined in advance withrespect to the input buffer 411, and a second threshold capacity isdetermined in advance with respect to the output buffer 413. The firstthreshold capacity and the second threshold capacity are the thresholdvalues THs shown in FIG. 4, and may be stored in the threshold valuestoring section 423. Meanwhile, the first threshold capacity and thesecond threshold capacity may have the same value. However, the firstthreshold capacity and the second threshold capacity may have differentvalues, if necessary.

In FIG. 9, an input buffer capacity being used is smaller than the firstthreshold capacity, and an output buffer capacity being used is smallerthan the second threshold capacity. In this example, when the inputbuffer capacity being used exceeds the first threshold capacity, thecapacity of the input buffer 411 can be increased as described withreference to FIG. 8A. This is because a sufficient space still exists inthe output buffer 413.

However, unlike FIG. 9, when the input buffer capacity being usedexceeds the first threshold capacity in a situation in which the outputbuffer capacity being used exceeds the second threshold capacity, thecapacity of the output buffer 413 may be insufficient when the capacityof the input buffer 411 is increased. Thus, it is preferable that thecapacity of the input buffer 411 is not increased. Hereinafter, anoperating method of the controller, which reflects the above-describedrequirement, will be described with reference to FIG. 10.

FIG. 10 is a flowchart illustrating an operating method of the memorycontroller 1200 according to another embodiment of the presentdisclosure.

Referring to FIG. 10, an input buffer capacity being currently used ischecked at step S120, and it is determined whether the input buffercapacity being used is larger than or equal to the first thresholdcapacity at step S140.

When the input buffer capacity being used is larger than or equal to thefirst threshold capacity (that is, “YES” at step S140), an output buffercapacity being currently used is checked at step S160, and it isdetermined whether the output buffer capacity is larger than or equal tothe second threshold capacity at step S180.

When the output buffer capacity being used is larger than or equal tothe second threshold capacity (that is, “YES” at step S180), thecapacity of the output buffer 413 is not sufficient, and therefore, theprocess ends without increasing the capacity of the input buffer 411.When the output buffer capacity being used is smaller than the secondthreshold capacity (that is, “NO” at step S180), the capacity of theoutput buffer 413 is sufficient, and therefore, the capacity of theinput buffer 411 is increased at step S220.

Meanwhile, when the input buffer capacity being used is smaller than thefirst threshold capacity as a result of the step S140 (that is, “NO” atstep S140), this means that the capacity of the input buffer 411 issufficient. Subsequently, the output buffer capacity being currentlyused is checked at step S165, and it is determined whether the outputbuffer capacity being used is larger than or equal to the secondthreshold capacity at step S185.

When the output buffer capacity being used is larger than or equal tothe second threshold capacity in a situation in which the capacity ofthe input buffer 411 is sufficient (that is, “YES” at step S185), thecapacity of the output buffer 413 is increased at step S225. When theoutput buffer capacity being used is smaller than the second thresholdcapacity (that is, “NO” at step S185), the process ends withoutincreasing the capacity of the output buffer 413.

In FIG. 10, it will be understood that the steps S120, S140, S160, S165,S180, and S185 are included in the step S100 of FIG. 6, and the stepsS220 and S225 are included in the step S200 of FIG. 6.

According to the embodiment shown in FIG. 10, although the capacity ofthe input buffer 411, which is being currently used, exceeds the firstthreshold capacity, it is determined whether the capacity of the inputbuffer 411 is to be increased according to whether the capacity of theoutput buffer 413 is sufficient. Meanwhile, when the capacity of theinput buffer 411 is sufficient, the capacity of the output buffer 413 isincreased when the capacity of the output buffer 413, which is beingcurrently used, exceeds the second threshold capacity. Accordingly, thecapacities of the input buffer 411 and the output buffer 413 can bechanged by considering both use states of the input buffer 411 and theoutput buffer 413.

FIG. 11A is a flowchart illustrating an example of the operating methodof the memory controller 1200 according to the present disclosure. FIG.11B is a flowchart illustrating another example of the operating methodof the memory controller 1200 according to the present disclosure. FIG.11A illustrates an embodiment in which the capacity of the input buffer411 is increased according to the usage of the input buffer 411, andFIG. 11B illustrates an embodiment in which the capacity of the outputbuffer 413 is increased according to the usage of the output buffer 413.Hereinafter, an operating method of the memory controller according toan exemplary embodiment of the present disclosure will be described withreferences to FIGS. 4, 11A, and 11B.

Referring to FIG. 11A, an operating method of the memory controller 1200according to an exemplary embodiment of the present disclosure includesa step at step S111 of checking capacities of the input buffer apredetermined number of times during a set period and counting a numberwhere the capacity of the input buffer exceeds a threshold capacity, anda step at step S131 of determining whether the counted value is greaterthan or equal to a predetermined first threshold number. The steps S111and S131 may be steps included in the step S100 of FIG. 6.

In the step S110 of FIG. 8A, an input buffer capacity being currentlyused is checked. On the other hand, in the step S111 of FIG. 11A,capacities of the input buffer are checked several times during acertain period, and a number where the checked capacity exceeds thethreshold capacity is counted. When the counted value is high, thismeans that the input buffer capacity being used in FIG. 7 frequentlyexceeds the threshold capacity. When the counted value is low, thismeans that the input buffer capacity does not frequently exceed thethreshold capacity.

Accordingly, when the counted value is greater than or equal to thepredetermined first threshold number in the step S131 (that is, “YES” atstep S131), this means that the input buffer capacity being usedfrequently exceeds the threshold capacity, and thus the capacity of theinput buffer is increased at step S211. The step S211 may be a stepincluded in the step S200 of FIG. 6.

Meanwhile, when the counted value is smaller than the predeterminedfirst threshold number in the step S131 (that is, “NO” at step S131),this means that the input buffer capacity being used does not frequentlyexceed the threshold capacity, and thus the process ends withoutincreasing the capacity of the input buffer.

Specifically, in the step S111, the input buffer capacity beingcurrently used is transferred in the form of buffer check data BMD shownin FIG. 4 to the buffer monitoring section 421. The buffer monitoringsection 421 counts a number where the input buffer capacity being usedexceeds the threshold capacity, by accumulating and analyzing buffercheck data BMD during a certain period. The counted value is transferredas buffer analysis data ANL to the buffer capacity determining section425.

In the step S131, the buffer capacity determining section 425 comparesthe counted value transferred as the buffer analysis data ANL with athreshold number. The threshold value storing section 423 transfers thethreshold number as a threshold value THs to the buffer capacitydetermining section 425. When the counted value is larger than or equalto the threshold number, the buffer capacity determining section 425generates a control signal CTR for increasing the capacity of the inputbuffer 411 and transfers the control signal CTR to the buffer memory410. The position indicated by the buffer pointer is changed in responseto the control signal CTR, so that the capacity of the input buffer 411is increased.

When the counted value is smaller than the threshold number, thecapacity of the input buffer 411 is not changed.

Referring to FIG. 11B, an operating method of the memory controlleraccording to an exemplary embodiment of the present disclosure includesa step at step S116 of checking capacities of the output buffer apredetermined number of times during a set period and counting a numberwhere the capacity of the output buffer exceeds a threshold capacity anda step at step S136 of determining whether the counted value is greaterthan or equal to a predetermined second threshold number. The steps S116and S136 may be steps included in the step S100 of FIG. 6.

Meanwhile, the operating method of the memory controller according tothe exemplary embodiment of the present disclosure further includes astep at step S216 of increasing the capacity of the output buffer 413when the counted value is greater than or equal to the second thresholdnumber as a result of the step S136 (that is, “YES at step S136). Thestep S216 may be a step included in the step S200 of FIG. 6.

When the counted value is smaller than the predetermined secondthreshold number in the step S136 (that is, “NO” at step S136), thismeans that the output buffer capacity being used does not frequentlyexceed the threshold capacity, and thus the process ends withoutincreasing the capacity of the output buffer.

It will be understood that, as the steps S116, S136, and S216 areperformed, the capacity of the output buffer 413 is changed similar tohow the capacity of the input buffer 411 changed as described in FIG.11A. Therefore, overlapping descriptions will be omitted.

FIG. 12 is a flowchart illustrating an operating method of the memorycontroller 1200 according to still another embodiment of the presentdisclosure.

Referring to FIG. 12, at step S121, a first count value that is a numberwhere a capacity of the input buffer, which is being used, exceeds afirst threshold capacity and a second count value that is a number wherea capacity of the output buffer, which is being used, exceeds a secondthreshold capacity are determined by checking use conditions of thebuffer memory a predetermined number of times during a set period. Then,after determining the first count value and the second count value atstep S121, it is first determined whether the first count value isgreater than or equal to a first threshold number at step S141.

When the first count value is greater than or equal to the firstthreshold number (that is, “YES” at step S141), it is determined whetherthe second count value is larger than or equal to a second thresholdnumber at step S181. When the second count value is greater than orequal to the second threshold number (that is, “YES” at step S181), thismeans that the capacity of the output buffer 413, which is being used,frequently exceeds the second threshold capacity. Accordingly, theprocess ends without increasing the capacity of the input buffer 411.When the second count value is smaller than the second threshold number(that is, “NO” at step S181), this means that the capacity of the outputbuffer 413, which is being used, does not frequently exceed the secondthreshold capacity. Accordingly, it is determined that the capacity ofthe output buffer 413 will be sufficient, and thus the capacity of theinput buffer 411 is increased at step S221.

Meanwhile, when the first count value is smaller than the firstthreshold number as a result of the step S141 (that is, “NO” at stepS141), this means that the capacity of the input buffer 411, which isbeing used, does not frequently exceed the first threshold capacity.Subsequently, it is determined whether the second count value is greaterthan or equal to the second threshold number at step S186.

When the second count value is greater than or equal to the secondthreshold number in a situation in which the capacity of the inputbuffer 411, which is being used, does not frequently exceed the firstthreshold capacity (that is, “YES” at step S186), the capacity of theoutput buffer 413 is increased at step S226. When the second count valueis smaller than the second threshold number (that is, “NO” at stepS186), the process ends without increasing the capacity of the outputbuffer 413.

In FIG. 12, it will be understood that the steps S121, S141, S181, andS186 are included in the step S100 of FIG. 6, and the steps S221 andS226 are included in the step S200 of FIG. 6.

According to the embodiment shown in FIG. 12, although the capacity ofthe input buffer 411, which is being used, frequently exceeds the firstthreshold capacity, it is determined whether the capacity of the inputbuffer 411 is to be increased according to a situation of the outputbuffer 413. Meanwhile, when the capacity of the input buffer 411, whichis being used, does not frequently exceed the first threshold capacity,the capacity of the output buffer 413 is increased when the capacity ofthe output buffer 413, which is being used, frequently exceeds thesecond threshold capacity. Accordingly, the capacities of the inputbuffer 411 and the output buffer 413 can be changed by considering bothuse states of the input buffer 411 and the output buffer 413.

FIG. 13A is a flowchart illustrating an example of the operating methodof the memory controller 1200 according to the present disclosure. FIG.13B is a flowchart illustrating another example of the operating methodof the memory controller 1200 according to the present disclosure. FIG.13A illustrates an embodiment in which the capacity of the input buffer411 is decreased according to the usage of the input buffer 411, andFIG. 13B illustrates an embodiment in which the capacity of the outputbuffer 413 is decreased according to the usage of the output buffer 413.

Referring to FIG. 13A, an operating method of the memory controller 1200according to an exemplary embodiment of the present disclosure includesa step at step S113 of checking capacities of the input buffer 411 apredetermined number of times during a set period and counting a numberwhere the capacity of the input buffer 411 exceeds a threshold capacity,and a step at step S133 of determining whether the counted value issmaller than a predetermined third threshold number. The steps S113 andS133 may be steps included in the step S100 of FIG. 6.

In the step S113 of FIG. 13A, the capacity of the input buffer 411 ischecked several times during a certain period, and a number where thechecked capacity exceeds the threshold capacity is counted. When thecounted value is low, this means that the frequency at which the inputbuffer capacity being used in FIG. 7 exceeds the threshold capacity islow.

Accordingly, when the counted value is smaller than the predeterminedthird threshold number (that is, “NO” at step S133), this means that thefrequency at which the input buffer capacity being used exceeds thethreshold capacity is low, and thus the capacity of the input buffer 411is decreased at step S213. The step S213 may be a step included in thestep S200 of FIG. 6.

Meanwhile, when the counted value is greater than or equal to thepredetermined third threshold number (that is, “YES” at step S133), thismeans that the input buffer capacity being used frequently exceeds thethreshold capacity to a certain degree, and thus the process endswithout decreasing the capacity of the input buffer 411.

Specifically, in the step S113, the input buffer capacity beingcurrently used is transferred in the form of buffer check data BMD shownin FIG. 4 to the buffer monitoring section 421. The buffer monitoringsection 421 counts a number where the input buffer capacity being usedexceeds the threshold capacity, by accumulating and analyzing buffercheck data BMD during a certain period. The counted value is transferredas buffer analysis data ANL to the buffer capacity determining section425.

In the step S133, the buffer capacity determining section 425 comparesthe counted value transferred as the buffer analysis data ANL with thethird threshold number. The threshold value storing section 423transfers the third threshold number as a threshold value THs to thebuffer capacity determining section 425. When the counted value issmaller than the third threshold number, the buffer capacity determiningsection 425 generates a control signal CTR for decreasing the capacityof the input buffer 411 and transfer the control signal CTR to thebuffer memory 410. The position indicated by the buffer pointer ischanged in response to the control signal CTR, so that the capacity ofthe input buffer 411 is decreased.

A value of the third threshold number may be variously determined, ifnecessary. As an example, when the third threshold number has a value of1, it is determined whether the counted value is smaller than 1 in stepS133. That is, in the step S133, when the counted value is 0, this meansthat the input buffer capacity being used has not exceeded the thresholdcapacity during the set period. Thus, the capacity of the input bufferis decreased at step S213.

When the counted value is greater than or equal to the third thresholdnumber, the capacity of the input buffer 411 is not changed.

Referring to FIG. 13B, an operating method of the memory controller 1200according to an exemplary embodiment of the present disclosure includesa step at step S118 of checking capacities of the output buffer 413 apredetermined number of times during a set period and counting a numberwhere the capacity of the output buffer exceeds a threshold capacity,and a step at step S138 of determining whether the counted value issmaller than a predetermined fourth threshold number. The steps S118 andS138 may be steps included in the step S100 of FIG. 6.

Meanwhile, the operating method of the memory controller according tothe exemplary embodiment of the present disclosure further includes astep at step S218 of decreasing the capacity of the output buffer 413when the counted value is smaller than the fourth threshold number as aresult of the step S138 (that is, “NO” at step S138). The step S218 is astep included in the step S200 of FIG. 6. When the counted value isgreater than or equal to the fourth threshold number (that is, “YES” atstep S138), this means that the output buffer capacity being usedfrequently exceeds the threshold capacity to a certain degree, and thusthe process ends without decreasing the capacity of the output buffer413.

It will be understood that, as the steps S118, S138, and S218 areperformed, the capacity of the output buffer 413 is changed similarly toFIG. 13A.

FIG. 14 is a diagram briefly illustrating data input/output to/from thebuffer memory 410.

Referring to FIG. 14, input data DIN1 received from the main memory 400is stored in the input buffer 411, and input data DIN2 output from theinput buffer 411 is transferred to the data conversion circuit 440. Inaddition, output data DOUT1 received from the data conversion circuit440 is stored in the output buffer 413, and output data DOUT2 outputfrom the output buffer 413 is transferred to the main memory 400. Thus,the input data DIN1 received from the main memory 400 or the input dataDIN2 output from the input buffer 411 is monitored, so that the entiredata written to the memory device 1100 can be monitored. Further, theoutput data DOUT1 received from the data conversion circuit 440 or theoutput data DOUT2 output from the output buffer 413 is monitored, sothat the entire data read from the memory device 1100 can be monitored.

According to the memory controller and the operating method thereofaccording to the embodiment of the present disclosure, the capacity ofthe input buffer or the output buffer of the buffer memory can beadjusted by monitoring data written to the memory device. Further,according to the memory controller and the operating method thereofaccording to the embodiment of the present disclosure, the capacity ofthe input buffer or the output buffer of the buffer memory can beadjusted by monitoring data read from the memory device.

For example, when the total capacity of the input data DIN1 or DIN2transferred to the memory device 1100 exceeds a certain reference value,this means that the erase-write cycle (EW cycle) of the memory device1100 has considerably progressed. The time required to write data to thememory device 1100 may increase, and therefore, a large capacity of theinput buffer 411 may be required. According to the memory controller andthe operating method thereof according to the embodiment of the presentdisclosure, the capacity of the input buffer or the output buffer can bedetermined by monitoring the total capacity of input/output data.

FIG. 15A is a flowchart illustrating an operating method of the memorycontroller according to still another embodiment of the presentdisclosure.

Referring to FIG. 15A, according to the operating method of the memorycontroller according to the embodiment of the present disclosure, inputdata is received at step S310. In the step S310, the input data DIN1 maybe received from the main memory 400 to the input buffer 411 of thebuffer memory 410. Subsequently, a capacity of the input data iscalculated at step S320. In the step S320, the capacity of the inputdata may be calculated by the buffer monitoring section 421.Subsequently, an accumulated input data capacity is updated at stepS330. The accumulated input data capacity may be a value representingthe total sum of all data capacities that have been input to the inputbuffer 411. Whenever input data is received, the buffer monitoringsection 421 of FIG. 4 may update the accumulated input data capacity.The updated accumulated input data capacity may be transferred as bufferanalysis data ANL to the buffer capacity determining section 425.

Subsequently, it is determined whether the calculated accumulated inputdata capacity is larger than or equal to a threshold accumulatedcapacity at step S350. The threshold accumulated capacity may betransferred as a threshold value THs of FIG. 4 from the threshold valuestoring section 423 to the buffer capacity determining section 425. Thebuffer capacity determining section 425 compares the transferredaccumulated input data capacity with the threshold accumulated capacity.

Subsequently, when the accumulated input data capacity is larger than orequal to the threshold accumulated capacity (that is, “YES” at stepS350), the capacity of the input buffer 411 is increased at step S360.In the step S360, the buffer capacity determining section 425 generatesa control signal CTR for increasing the capacity of the input buffer411. The buffer memory 410 changes the address indicated by the bufferpointer in response to the control signal CTR, so that the capacity ofthe input buffer 411 is increased. When the accumulated input datacapacity is smaller than the threshold accumulated capacity (that is,“NO” at step S350), the process ends without increasing the capacity ofthe input buffer 411.

The method of changing the capacity of the input buffer 411 bymonitoring the input data DIN1 is illustrated in FIG. 15A. It will beunderstood that, in a similar method, the capacity of the output buffer413 may be changed by monitoring the output data DOUT1.

FIG. 15B is a flowchart illustrating an operating method of the memorycontroller according to still another embodiment of the presentdisclosure.

Referring to FIG. 15B, according to the operating method of the memorycontroller according to the embodiment of the present disclosure, outputdata is received at step S410. In the step S410, the output data DOUT1may be received from the data conversion unit 440 to the output buffer413 of the buffer memory 410. Subsequently, a capacity of the outputdata is calculated at step S420. In the step S420, the capacity of theoutput data may be calculated by the buffer monitoring section 421.Subsequently, an accumulated output data capacity is updated at stepS430. The accumulated output data capacity may be a value representingthe total sum of all data capacities that have been input to the outputbuffer 413. Whenever output data is received, the buffer monitoringsection 421 of FIG. 4 may update the accumulated output data capacity.The updated accumulated output data capacity may be transferred asbuffer analysis data ANL to the buffer capacity determining section 425.

Subsequently, it is determined whether the calculated accumulated outputdata capacity is larger than or equal to a threshold accumulatedcapacity at step S450. The threshold accumulated capacity may betransferred as a threshold value THs of FIG. 4 from the threshold valuestoring section 423 to the buffer capacity determining section 425. Thebuffer capacity determining section 425 compares the transferredaccumulated output data capacity with the threshold accumulatedcapacity.

Subsequently, when the accumulated output data capacity is larger thanor equal to the threshold accumulated capacity (that is, “YES” at stepS450), the capacity of the output buffer 413 is increased at step S460.In the step S460, the buffer capacity determining section 425 generatesa control signal CTR for increasing the capacity of the output buffer413. The buffer memory 410 changes the address indicated by the bufferpointer in response to the control signal CTR, so that the capacity ofthe output buffer 413 is increased. When the accumulated output datacapacity is smaller than the threshold accumulated capacity (that is,“NO” at step S450), the process ends without increasing the capacity ofthe output buffer 413.

FIG. 16 is a diagram illustrating an embodiment of the memory systemincluding the memory controller shown in FIG. 3.

Referring to FIG. 16, the memory system 3000 may be implemented as acellular phone, a smart phone, a tablet PC, a personal digital assistant(PDA), or a wireless communication device. The memory system 3000 mayinclude a memory device 1100 and a memory controller 1200 capable ofcontrolling an operation of the memory device 1100. The memorycontroller 1200 may control a data access operation of the memory device1100, e.g., a program operation, an erase operation, a read operation,or the like under the control of a processor 3100.

Data programmed in the memory device 1100 may be output through adisplay 3200 under the control of the memory controller 1200.

A radio transceiver 3300 may transmit/receive radio signals through anantenna ANT. For example, the radio transceiver 3300 may convert a radiosignal received through the antenna ANT into a signal that can beprocessed by the processor 3100. Therefore, the processor 3100 mayprocess a signal output from the radio transceiver 3300 and transmit theprocessed signal to the memory controller 1200 or the display 3200. Thememory controller 1200 may transmit the signal processed by theprocessor 3100 to the memory device 1100. Also, the radio transceiver3300 may convert a signal output from the processor 3100 into a radiosignal, and output the converted radio signal to an external devicethrough the antenna ANT. An input device 3400 is a device capable ofinputting a control signal for controlling an operation of the processor3100 or data to be processed by the processor 3100, and may beimplemented as a pointing device such as a touch pad or a computermount, a keypad, or a keyboard. The processor 3100 may control anoperation of the display 3200 such that data output from the memorycontroller 1200, data output from the radio transceiver 3300, or dataoutput from the input device 3400 can be output through the display3200.

In some embodiments, the memory controller 1200 capable of controllingan operation of the memory device 1100 may be implemented as a part ofthe processor 3100, or be implemented as a chip separate from theprocessor 3100.

FIG. 17 is a diagram illustrating an embodiment of the memory systemincluding the memory controller shown in FIG. 3.

Referring to FIG. 17, the memory system 4000 may be implemented as apersonal computer (PC), a tablet PC, a net-book, an e-reader, a personaldigital assistant (PDA), a portable multimedia player (PMP), an MP3player, or an MP4 player.

The memory system 4000 may include a memory device 1100 and a memorycontroller 1200 capable of controlling a data processing operation ofthe memory device 1100.

A processor 4100 may output data stored in the memory device 1100through a display 4300 according to data input through an input device4200. For example, the input device 4200 may be implemented as apointing device such as a touch pad or a computer mouse, a keypad, or akeyboard.

The processor 4100 may control overall operations of the memory system4000, and control an operation of the memory controller 1200. In someembodiments, the memory controller 1200 capable of controlling anoperation of the memory device 1100 may be implemented as a part of theprocessor 4100, or be implemented as a chip separate from the processor4100.

FIG. 18 is a diagram illustrating an embodiment of the memory systemincluding the memory controller shown in FIG. 3.

Referring to FIG. 18, the memory system 5000 may be implemented as animage processing device, e.g., a digital camera, a mobile terminalhaving a digital camera attached thereto, a smart phone having a digitalcamera attached thereto, or a tablet PC having a digital camera attachedthereto.

The memory system 5000 may include a memory device 1100 and a memorycontroller 1200 capable of controlling a data processing operation ofthe memory device 1100, e.g., a program operation, an erase operation,or a read operation.

An image sensor 5200 of the memory system 5000 may convert an opticalimage into digital signals, and the converted digital signals may betransmitted to a processor 5100 or the memory controller 1200. Under thecontrol of the processor 5100, the converted digital signals may beoutput through a display 5300, or be stored in the memory device 1100through the memory controller 1200. In addition, data stored in thememory device 1100 may be output through the display 5300 under thecontrol of the processor 5100 or the memory controller 1200.

In some embodiments, the memory controller 1200 capable of controllingan operation of the memory device 1100 may be implemented as a part ofthe processor 5100, or be implemented as a chip separate from theprocessor 5100.

FIG. 19 is a diagram illustrating an embodiment of the memory systemincluding the memory controller shown in FIG. 3.

Referring to FIG. 19, the memory system 7000 may be implemented as amemory card or a smart card. The memory system 7000 may include a memorydevice 1100, a memory controller 1200, and a card interface 7100.

The memory controller 1200 may control data exchange between the memorydevice 1100 and the card interface 7100. In some embodiments, the cardinterface 7100 may be a secure digital (SD) card interface or amulti-media card (MMC) interface, but the present disclosure is notlimited thereto.

The card interface 7100 may interface data exchange between a host 6000and the memory controller 1200 according to a protocol of the host 6000.In some embodiments, the card interface 7100 may support a universalserial bus (USB) protocol and an inter-chip (IC)-USB protocol. The cardinterface 7100 may mean hardware capable of supporting a protocol usedby the host 6000, software embedded in the hardware, or a signaltransmission scheme.

When the memory system 7000 is coupled to a host interface 6200 of thehost 6000 such as a PC, a tablet PC, a digital camera, a digital audioplayer, a cellular phone, console video game hardware, or a digitalset-top box, the host interface 6200 may perform data communication withthe memory device 1100 through the card interface 7100 and the memorycontroller 1200 under the control of a microprocessor 6100.

According to the present disclosure, there can be provided a memorycontroller capable of more efficiently utilizing a buffer memory.

Further, according to the present disclosure, there can be provided anoperating method of a memory controller capable of more efficientlyutilizing a buffer memory.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the present disclosure asset forth in the following claims.

What is claimed is:
 1. A method for operating a memory controller forcontrolling an operation of a memory device, the method comprising:allocating capacities of an input buffer and an output buffer, based ona use state of at least one of the input buffer and the output buffer;storing input data received from a host in the input buffer and storingoutput data received from the memory device in the output buffer;storing a threshold value for changing the capacities of the inputbuffer and the output buffer; generating buffer analysis data accordingto usages of the input buffer and the output buffer; and determiningwhether the allocated capacities of the input buffer and the outputbuffer are to be changed by comparing the buffer analysis data and thethreshold value.
 2. The method of claim 1, wherein the allocatingcomprises dividing the capacities of the input buffer and the outputbuffer by a buffer pointer indicating a specific address of the inputbuffer and the output buffer, and allocating the capacities of the inputbuffer and the output buffer by changing the address indicated by thebuffer pointer.
 3. The method of claim 2, wherein, in response to thecapacity of any one of the input buffer and the output buffer beingincreased, the capacity of the other of the input buffer and the outputbuffer is decreased.
 4. The method of claim 1, wherein the bufferanalysis data includes the capacity of the input buffer, which is beingcurrently used, and the threshold value includes a first thresholdcapacity of the input buffer, wherein the determining includesdetermining that the capacity of the input buffer is to be increased, inresponse to the capacity of the input buffer, which is being currentlyused, being larger than or equal to the first threshold capacity.
 5. Themethod of claim 1, wherein the buffer analysis data includes thecapacity of the output buffer, which is being currently used, and thethreshold value includes a second threshold capacity of the outputbuffer, wherein the determining includes determining that the capacityof the output buffer is to be increased, in response to the capacity ofthe output buffer, which is being currently used, being larger than orequal to the second threshold capacity.
 6. The method of claim 1,wherein the buffer analysis data includes a first count value that is anumber where a capacity of the input buffer, which is being used,exceeds a predetermined first threshold capacity, and the thresholdvalue includes a predetermined first threshold number of the inputbuffer, wherein the determining includes determining that the capacityof the input buffer is to be increased, in response to the first countvalue measured during a predetermined first period being greater than orequal to the first threshold number.
 7. The method of claim 1, whereinthe buffer analysis data includes a second count value that is a numberwhere the capacity of the output buffer, which is being used, exceeds apredetermined second threshold capacity, and the threshold valueincludes a predetermined second threshold number of the output buffer,wherein the determining includes determining that the capacity of theoutput buffer is to be increased, in response to the second count valuemeasured during a predetermined first period being greater than or equalto the second threshold number.
 8. The method of claim 1, wherein thebuffer analysis data includes a first count value that is a number wherethe capacity of the input buffer, which is being used, exceeds apredetermined first threshold capacity, and the threshold value includesa predetermined third threshold number of the input buffer, wherein thedetermining includes determining that the capacity of the input bufferis to be decreased, in response to the first count value measured duringa predetermined first period being smaller than the third thresholdnumber.
 9. The method of claim 1, wherein the buffer analysis dataincludes a second count value that is a number where the capacity of theoutput buffer, which is being used, exceeds a predetermined secondthreshold capacity, and the threshold value includes a predeterminedfourth threshold number of the output buffer, wherein the determiningincludes determining that the capacity of the output buffer is to bedecreased, in response to the second count value measured during apredetermined first period being smaller than the fourth thresholdnumber.
 10. The method of claim 1, wherein the buffer analysis dataincludes a total capacity of data that have been stored in the inputbuffer, and the threshold value includes a predetermined thresholdaccumulated capacity of the input buffer, wherein the determiningincludes determining that the capacity of the input buffer is to beincreased, in response to the total capacity being larger than or equalto the threshold accumulated capacity.
 11. The method of claim 10,wherein the total capacity is updated whenever input data is stored inthe input buffer.
 12. The method of claim 1, wherein the buffer analysisdata includes a total capacity of data that have been stored in theoutput buffer, and the threshold value includes a predeterminedthreshold accumulated capacity of the output buffer, wherein thedetermining includes determining that the capacity of the output bufferis to be increased, in response to the total capacity being larger thanor equal to the threshold accumulated capacity.
 13. The method of claim1, wherein each of the input buffer and the output buffer is implementedin a First-In-First-Out (FIFO) structure.
 14. A memory controller forcontrolling an operation of a memory device, the memory controllercomprising: a buffer memory configured to include an input buffer forstoring input data received from a host and an output buffer for storingoutput data received from the memory device; and a buffer managementcircuit configured to: identify capacities of the input buffer and theoutput buffer, which are being used; compare the capacities of the inputbuffer and the output buffer with threshold capacities including apredetermined first threshold capacity and a predetermined secondthreshold capacity, respectively; generate count values including afirst count value and a second count value; and adjust the capacities ofthe input buffer and the output buffer, based on the count values,wherein the first count value is a number where the capacity of theinput buffer exceeds the predetermined first threshold capacity, andwherein the second count value is a number where the capacity of theoutput buffer exceeds the predetermined second threshold capacity. 15.The memory controller of claim 14, wherein the buffer management circuitchanges an address indicated by a buffer pointer for distinguishing theinput buffer and the output buffer from each other.
 16. The memorycontroller of claim 14, wherein the buffer management circuit determineswhether the first count value is greater than or equal to apredetermined first threshold number, wherein the buffer managementcircuit increases the capacity of the input buffer, in response to thefirst count value being greater than or equal to the first thresholdnumber.
 17. The memory controller of claim 14, wherein the buffermanagement circuit determines whether the second count value is greaterthan or equal to a predetermined second threshold number, wherein thebuffer management circuit increases the capacity of the output buffer,in response to the second count value being greater than or equal to thesecond threshold number.